{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490459","patent":{"patent_number":"US-10490459","title":"Method for source/drain contact formation in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2017-08-25T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H04R","H04R","H01L","H01L","H01L","H04B","H04B","H04R","H04R","H04R"],"num_claims":20,"abstract":"A method includes providing a structure that includes a substrate; first and second gate structures over the substrate; first and second source/drain (S/D) features over the substrate; a first dielectric layer over sidewalls of the first and second gate structures and the first and second S/D features; and a second dielectric layer over the first dielectric layer. The first and second S/D features are adjacent to the first and second gate structures respectively. The first and second S/D features comprise different materials. The method further includes etching the first and second dielectric layers to expose the first and second S/D features; doping a p-type dopant to the first and second S/D features; and performing a selective etching process to the first and second S/D features after the doping of the p-type dopant. The selective etching process recesses the first S/D feature faster than it recesses the second S/D feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for source/drain contact formation in semiconductor devices","description":"A method includes providing a structure that includes a substrate; first and second gate structures over the substrate; first and second source/drain (S/D) features over the substrate; a first dielect","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490459","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490459","citation_suggestion":"Patentable. \"Method for source/drain contact formation in semiconductor devices\" (US-10490459). https://patentable.app/patents/US-10490459","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490459","json":"https://patentable.app/api/llm-context/US-10490459","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:18:04.287Z"}