{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490496","patent":{"patent_number":"US-10490496","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2018-02-24T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"This invention is to improve a performance of a semiconductor device. The semiconductor device includes a semiconductor substrate, a p-type well region formed in the semiconductor substrate, a first insulating layer formed over the p-type well region, a semiconductor layer formed over the first insulating layer, a second insulating layer formed over the semiconductor layer, and a conductor layer formed over the second insulating layer. A first capacitive element is comprised of the semiconductor layer, the second insulating layer, and the conductor layer, while a second capacitive element is comprised of the p-type well region, the first insulating layer, and the semiconductor layer, in which each of the semiconductor substrate and the semiconductor layer includes a single crystal silicon layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"This invention is to improve a performance of a semiconductor device. The semiconductor device includes a semiconductor substrate, a p-type well region formed in the semiconductor substrate, a first i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490496","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490496","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-10490496). https://patentable.app/patents/US-10490496","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490496","json":"https://patentable.app/api/llm-context/US-10490496","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:17:18.727Z"}