{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490501","patent":{"patent_number":"US-10490501","title":"Method to form interconnect structure with tungsten fill","assignee":null,"inventors":[],"filing_date":"2018-02-09T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"Aspects of the present disclosure include a method for forming a contact on a semiconductor device, the semiconductor device including a conductive region disposed over a substrate, the method comprising: depositing a dielectric material on the substrate; forming an opening in the dielectric material to expose the conductive region; forming a barrier layer on a lower surface and sidewalls of the opening in the dielectric material, the barrier layer terminating below an upper surface of the dielectric material and surrounding a lower portion of the opening; depositing cobalt in the lower portion of the opening, the cobalt terminating at an upper surface of the barrier layer; depositing tungsten to fill the opening to at least the upper surface of the dielectric material; and planarizing the upper surface of the dielectric material with the tungsten in the opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method to form interconnect structure with tungsten fill","description":"Aspects of the present disclosure include a method for forming a contact on a semiconductor device, the semiconductor device including a conductive region disposed over a substrate, the method compris","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490501","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490501","citation_suggestion":"Patentable. \"Method to form interconnect structure with tungsten fill\" (US-10490501). https://patentable.app/patents/US-10490501","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490501","json":"https://patentable.app/api/llm-context/US-10490501","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:44:12.280Z"}