{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490517","patent":{"patent_number":"US-10490517","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2018-05-23T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor device and a manufacturing method thereof according to the present invention include: a first pad electrode formed in an uppermost wiring layer of a multilayer wiring layer; a first insulating film formed on the first pad electrode; and a first organic insulating film formed over the first insulating film. Also, the semiconductor device and the manufacturing method thereof include: a barrier metal film formed on the first organic insulating film and connected to the first pad electrode; and a conductive film formed on the barrier metal film. Then, a second insulating film made of an inorganic material is formed on an upper surface of the first organic insulating film between the barrier metal film and the first organic insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device and a manufacturing method thereof according to the present invention include: a first pad electrode formed in an uppermost wiring layer of a multilayer wiring layer; a first in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490517","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490517","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-10490517). https://patentable.app/patents/US-10490517","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490517","json":"https://patentable.app/api/llm-context/US-10490517","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:46:08.653Z"}