{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490531","patent":{"patent_number":"US-10490531","title":"Manufacturing method of semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-03-06T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A manufacturing method of a semiconductor device according to the present embodiment includes forming a modified layer with distortion in semiconductor crystals in a first and a second semiconductor wafers by radiating laser to a dicing region of the first and second semiconductor wafers, each of the first and second semiconductor wafers including a plurality of semiconductor chips. The method also includes stacking the second semiconductor wafer on the first semiconductor wafer to be shifted in a first direction. The first direction is a direction from a first side of a first semiconductor chip of the first semiconductor wafer towards an opposite side to the first side of the first semiconductor chip. The method further includes cleaving the first and second semiconductor wafers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device and semiconductor device","description":"A manufacturing method of a semiconductor device according to the present embodiment includes forming a modified layer with distortion in semiconductor crystals in a first and a second semiconductor w","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490531","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490531","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device and semiconductor device\" (US-10490531). https://patentable.app/patents/US-10490531","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490531","json":"https://patentable.app/api/llm-context/US-10490531","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:45:59.322Z"}