{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490546","patent":{"patent_number":"US-10490546","title":"Forming on-chip metal-insulator-semiconductor capacitor","assignee":null,"inventors":[],"filing_date":"2017-03-21T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method is presented for forming a semiconductor structure. The method includes forming a plurality of fins on a first region of the semiconductor substrate, forming a bi-polymer structure, selectively removing the first polymer of the bi-polymer structure and forming deep trenches in the semiconductor substrate resulting in pillars in a second region of the semiconductor structure. The method further includes selectively removing the second polymer of the bi-polymer structure, doping the pillars, and depositing a high-k metal gate (HKMG) over the first and second regions to form the MIS capacitor in the second region of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming on-chip metal-insulator-semiconductor capacitor","description":"A method is presented for forming a semiconductor structure. The method includes forming a plurality of fins on a first region of the semiconductor substrate, forming a bi-polymer structure, selective","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490546","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490546","citation_suggestion":"Patentable. \"Forming on-chip metal-insulator-semiconductor capacitor\" (US-10490546). https://patentable.app/patents/US-10490546","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490546","json":"https://patentable.app/api/llm-context/US-10490546","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:03:20.769Z"}