{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490558","patent":{"patent_number":"US-10490558","title":"Reducing or avoiding mechanical stress in static random access memory (SRAM) strap cells","assignee":null,"inventors":[],"filing_date":"2017-05-31T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["G11C","H01L","H01L","H01L","H01L","G11C","H01L"],"num_claims":14,"abstract":"Aspects for reducing or avoiding mechanical stress in static random access memory (SRAM) strap cells are disclosed herein. An exemplary SRAM strap cell includes a P-type doped well (Pwell) tap electrically coupled to a first supply rail to distribute a first supply voltage to a Pwell region of corresponding SRAM bit cell rows. The SRAM strap cell also includes an N-type doped well (Nwell) tap electrically coupled to a second supply rail to distribute a second supply voltage to an Nwell region of corresponding SRAM bit cell rows. In one exemplary aspect, the Nwell tap can include multiple supply contacts used to couple the second supply rail to the SRAM strap cell to reduce mechanical stress in the Nwell tap. In another exemplary aspect, the Pwell tap can include non-active gates disposed across multiple Fins to stabilize the Fins and reduce or avoid mechanical stress in the Pwell tap."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Reducing or avoiding mechanical stress in static random access memory (SRAM) strap cells","description":"Aspects for reducing or avoiding mechanical stress in static random access memory (SRAM) strap cells are disclosed herein. An exemplary SRAM strap cell includes a P-type doped well (Pwell) tap electri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490558","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490558","citation_suggestion":"Patentable. \"Reducing or avoiding mechanical stress in static random access memory (SRAM) strap cells\" (US-10490558). https://patentable.app/patents/US-10490558","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490558","json":"https://patentable.app/api/llm-context/US-10490558","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:44:23.224Z"}