{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490625","patent":{"patent_number":"US-10490625","title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-03-30T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate, a first semiconductor layer, a first semiconductor region, a second semiconductor layer, a second semiconductor region, a third semiconductor region, a fourth semiconductor sub-region, a first electrode, a gate insulating film, a gate electrode, and second electrode. At a corner part of an active region in which a main current flows, a fifth semiconductor sub-region is provided. An impurity concentration of the fifth semiconductor sub-region is higher than an impurity concentration of the second semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","description":"A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate, a first semiconductor layer, a first semiconductor region, a second semiconductor layer, a second semiconduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490625","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490625","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device\" (US-10490625). https://patentable.app/patents/US-10490625","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490625","json":"https://patentable.app/api/llm-context/US-10490625","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:08:07.980Z"}