{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490626","patent":{"patent_number":"US-10490626","title":"Semiconductor device with super junction and process for the same","assignee":null,"inventors":[],"filing_date":"2018-07-30T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"A semiconductor device with super junction and process for the same is disclosed. The semiconductor device includes a silicon substrate and a first conductive type epitaxial layer thereon, a plurality of second conductive type conductive pillars formed below an upper face of the first conductive type epitaxial layer, where the second conductive type conductive pillars are implanted with neutral element having predetermined amount. When the semiconductor device operates in a predetermined temperature, the releasing amount of the neutral element can completely or partially compensate the releasing amount of carrier of opposite polarity from the epitaxial layer for the second conductive type conductive pillars due to the predetermined temperature, thus prevent the degrade of endurance ability for the surge voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with super junction and process for the same","description":"A semiconductor device with super junction and process for the same is disclosed. The semiconductor device includes a silicon substrate and a first conductive type epitaxial layer thereon, a plurality","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490626","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490626","citation_suggestion":"Patentable. \"Semiconductor device with super junction and process for the same\" (US-10490626). https://patentable.app/patents/US-10490626","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490626","json":"https://patentable.app/api/llm-context/US-10490626","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:10:41.907Z"}