{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490627","patent":{"patent_number":"US-10490627","title":"Semiconductor structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2018-11-13T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"A manufacturing method of a semiconductor structure includes the following steps. A first trench isolation is formed in a substrate. A second trench isolation is formed in the substrate after the step of forming the first trench isolation. The second trench isolation is formed at a side of the first trench isolation, and the second trench isolation is directly connected with the first trench isolation. The semiconductor structure includes the substrate, the first trench isolation, and the second trench isolation. A material of the second trench isolation is different from a material of the first trench isolation. The first trench isolation is disposed at one side of the second trench isolation, and the second trench isolation is directly connected with the first trench isolation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method thereof","description":"A manufacturing method of a semiconductor structure includes the following steps. A first trench isolation is formed in a substrate. A second trench isolation is formed in the substrate after the step","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490627","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490627","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method thereof\" (US-10490627). https://patentable.app/patents/US-10490627","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490627","json":"https://patentable.app/api/llm-context/US-10490627","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:00:05.316Z"}