{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490630","patent":{"patent_number":"US-10490630","title":"Method of preventing bulk silicon charge transfer for nanowire and nanoslab processing","assignee":null,"inventors":[],"filing_date":"2017-11-14T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A method of fabricating a semiconductor device includes providing a substrate having a layered fin structure thereon. The layered fin structure includes base fin portion, a sacrificial portion provided on the base fin portion and a channel portion provided on the sacrificial portion. A doping source film is provided on the substrate over the layered fin structure, and diffusing doping materials from the doping source film into a portion of the layered fin structure other than the channel portion to form a diffusion doped region in the layered fin structure. An isolation material is provided on the substrate over at least the diffusion doped region of the layered fin structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of preventing bulk silicon charge transfer for nanowire and nanoslab processing","description":"A method of fabricating a semiconductor device includes providing a substrate having a layered fin structure thereon. The layered fin structure includes base fin portion, a sacrificial portion provide","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490630","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490630","citation_suggestion":"Patentable. \"Method of preventing bulk silicon charge transfer for nanowire and nanoslab processing\" (US-10490630). https://patentable.app/patents/US-10490630","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490630","json":"https://patentable.app/api/llm-context/US-10490630","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:07:12.393Z"}