{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490635","patent":{"patent_number":"US-10490635","title":"Semiconductor substrate made of silicon carbide and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2017-01-12T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"In a semiconductor substrate having a silicon carbide substrate and an epitaxial film, a concentration ratio between a hydrogen concentration in the silicon carbide substrate and a hydrogen concentration in the epitaxial film is in a range between 0.2 and 5, preferably in a range between 0.5 and 2. Thus, hydrogen diffusion at a boundary position between the epitaxial film and the SiC substrate is restricted. Further, it is possible to prepare the semiconductor substrate for restricting the reduction of the hydrogen concentration. Thus, it is possible to improve the properties of the SiC semiconductor device using the semiconductor substrate, for example, the bipolar device such as a PN diode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor substrate made of silicon carbide and method for manufacturing same","description":"In a semiconductor substrate having a silicon carbide substrate and an epitaxial film, a concentration ratio between a hydrogen concentration in the silicon carbide substrate and a hydrogen concentrat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490635","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490635","citation_suggestion":"Patentable. \"Semiconductor substrate made of silicon carbide and method for manufacturing same\" (US-10490635). https://patentable.app/patents/US-10490635","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490635","json":"https://patentable.app/api/llm-context/US-10490635","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:33:37.353Z"}