{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490636","patent":{"patent_number":"US-10490636","title":"Lateral high electron mobility transistor with integrated clamp diode","assignee":null,"inventors":[],"filing_date":"2017-12-05T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A method of forming a semiconductor device includes providing an engineered substrate, forming a gallium nitride layer coupled to the engineered substrate, forming a channel region coupled to the gallium nitride layer by forming an aluminum gallium nitride barrier layer on the front surface of the gallium nitride layer, forming a gate dielectric layer coupled to the aluminum gallium nitride barrier layer in the central portion of the channel region, forming a gate contact coupled to the gate dielectric layer, forming a source contact at the first end of the channel region, forming a via at the second end of the channel region, filling the via with a conductive material, forming a drain contact coupled to the via, removing the engineered substrate to expose the back surface of the epitaxial gallium nitride layer, and forming a drain pad on the back surface of the epitaxial gallium nitride layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lateral high electron mobility transistor with integrated clamp diode","description":"A method of forming a semiconductor device includes providing an engineered substrate, forming a gallium nitride layer coupled to the engineered substrate, forming a channel region coupled to the gall","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490636","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490636","citation_suggestion":"Patentable. \"Lateral high electron mobility transistor with integrated clamp diode\" (US-10490636). https://patentable.app/patents/US-10490636","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490636","json":"https://patentable.app/api/llm-context/US-10490636","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:38:18.731Z"}