{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490641","patent":{"patent_number":"US-10490641","title":"Methods of forming a gate contact structure for a transistor","assignee":null,"inventors":[],"filing_date":"2017-04-28T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"One illustrative method disclosed includes, among other things, forming a conductive source/drain metallization structure adjacent a gate, forming a gate contact opening that exposes at least a portion of a front face of the conductive source/drain metallization structure and a portion of an upper surface of a gate structure of the gate. In this example, the method further includes forming an internal insulating spacer within the gate contact opening that is positioned on and in contact with the exposed portion of the front face, wherein the spacer leaves at least a portion of the upper surface of the gate structure exposed, and forming a conductive gate contact structure (CB) in the conductive gate contact opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming a gate contact structure for a transistor","description":"One illustrative method disclosed includes, among other things, forming a conductive source/drain metallization structure adjacent a gate, forming a gate contact opening that exposes at least a portio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490641","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490641","citation_suggestion":"Patentable. \"Methods of forming a gate contact structure for a transistor\" (US-10490641). https://patentable.app/patents/US-10490641","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490641","json":"https://patentable.app/api/llm-context/US-10490641","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:32:01.673Z"}