{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490642","patent":{"patent_number":"US-10490642","title":"Semiconductor device having silicide layers","assignee":null,"inventors":[],"filing_date":"2018-03-19T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"A semiconductor device includes a semiconductor substrate having a first side, and a trench structure having a bottom and a sidewall. The bottom has at least first and second bottom portions laterally adjacent to one another. Each bottom portion has a concave shape with a ridge formed between the first and second bottom portions. An insulating material covers the sidewall and first bottom portion of the trench structure while leaving the second bottom portion uncovered. A mesa region extends to the first side of the substrate and forms the sidewall of the trench structure. The device also includes a first silicide layer on a top region of the mesa region, a second silicide layer on the second bottom portion of the trench structure, a first metal layer on and in contact with the first silicide layer, and a second metal layer on and in contact with the second silicide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having silicide layers","description":"A semiconductor device includes a semiconductor substrate having a first side, and a trench structure having a bottom and a sidewall. The bottom has at least first and second bottom portions laterally","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490642","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490642","citation_suggestion":"Patentable. \"Semiconductor device having silicide layers\" (US-10490642). https://patentable.app/patents/US-10490642","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490642","json":"https://patentable.app/api/llm-context/US-10490642","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:04:33.414Z"}