{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490646","patent":{"patent_number":"US-10490646","title":"Semiconductor device and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2016-08-29T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Protons are injected from a back surface side of a semiconductor substrate to repair both defects within the semiconductor substrate and also defects in a channel forming region on a front surface side of the semiconductor substrate. As a result, variation in gate threshold voltage is reduced and leak current when a reverse voltage is applied is reduced. Provided is a semiconductor device including a semiconductor substrate that includes an n-type impurity region containing protons, on a back surface side thereof; and a barrier metal that has an effect of shielding from protons, on a front surface side of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and semiconductor device manufacturing method","description":"Protons are injected from a back surface side of a semiconductor substrate to repair both defects within the semiconductor substrate and also defects in a channel forming region on a front surface sid","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490646","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490646","citation_suggestion":"Patentable. \"Semiconductor device and semiconductor device manufacturing method\" (US-10490646). https://patentable.app/patents/US-10490646","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490646","json":"https://patentable.app/api/llm-context/US-10490646","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:18:23.902Z"}