{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490652","patent":{"patent_number":"US-10490652","title":"Semiconductor device providing improved read and write margin, and manufacturing method for the same","assignee":null,"inventors":[],"filing_date":"2018-06-01T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["G11C","G11C","H01L"],"num_claims":9,"abstract":"The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor devices and manufacturing methods for the same. A semiconductor device may include: a substrate; a first active region on the substrate; a first gate structure positioned on the first active region; and a first source and a first drain that are positioned in the first active region and respectively on two sides of the first gate structure, where a size of the first drain is larger than a size of the first source. In forms of the present disclosure, because the size of the first drain is larger than the size of the first source, a current from the first drain to the first source is greater than a current from the first source to the first drain, so that the semiconductor device can make a read current relatively low and a write current relatively high in a static random access memory (SRAM), thereby improving a read margin and a write margin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device providing improved read and write margin, and manufacturing method for the same","description":"The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor devices and manufacturing methods for the same. A semiconductor device may include: a substrate; ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490652","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490652","citation_suggestion":"Patentable. \"Semiconductor device providing improved read and write margin, and manufacturing method for the same\" (US-10490652). https://patentable.app/patents/US-10490652","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490652","json":"https://patentable.app/api/llm-context/US-10490652","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:05:18.904Z"}