{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490654","patent":{"patent_number":"US-10490654","title":"Vertical tunneling field-effect transistor cell and fabricating the same","assignee":null,"inventors":[],"filing_date":"2018-12-20T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Tunneling field-effect transistors (TFETs) and associated methods of fabrication are disclosed herein. An exemplary TFET includes a protrusion that extends vertically from a substrate. A drain region is in a bottommost portion of the protrusion. A source region is in a topmost portion of the protrusion. A gate stack that wraps a middle portion of the protrusion. The gate stack further wraps around a portion of the source region and a portion of the drain region. Spacers are along a portion of the topmost portion of the protrusion. The TFET further includes a drain contact coupled to the drain region, a gate contact coupled to the gate stack, and a source contact coupled to the source region. The source contact has a width that is greater than a width of the source region. The source contact is disposed on the source region and a portion of the spacers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical tunneling field-effect transistor cell and fabricating the same","description":"Tunneling field-effect transistors (TFETs) and associated methods of fabrication are disclosed herein. An exemplary TFET includes a protrusion that extends vertically from a substrate. A drain region ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490654","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490654","citation_suggestion":"Patentable. \"Vertical tunneling field-effect transistor cell and fabricating the same\" (US-10490654). https://patentable.app/patents/US-10490654","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490654","json":"https://patentable.app/api/llm-context/US-10490654","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:34:54.006Z"}