{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490661","patent":{"patent_number":"US-10490661","title":"Dopant concentration boost in epitaxially formed material","assignee":null,"inventors":[],"filing_date":"2017-01-27T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A dopant boost in the source/drain regions of a semiconductor device, such as a transistor can be provided. A semiconductor device can include a doped epitaxy of a first material having a plurality of boosting layers embedded within. The boosting layers can be of a second material different from the first material. Another device can include a source/drain feature of a transistor. The source/drain feature includes a doped source/drain material and one or more embedded distinct boosting layers. A method includes growing a boosting layer in a recess of a substrate, where the boosting layer is substantially free of dopant. The method also includes growing a layer of doped epitaxy in the recess on the boosting layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dopant concentration boost in epitaxially formed material","description":"A dopant boost in the source/drain regions of a semiconductor device, such as a transistor can be provided. A semiconductor device can include a doped epitaxy of a first material having a plurality of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490661","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490661","citation_suggestion":"Patentable. \"Dopant concentration boost in epitaxially formed material\" (US-10490661). https://patentable.app/patents/US-10490661","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490661","json":"https://patentable.app/api/llm-context/US-10490661","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:00:18.841Z"}