{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490663","patent":{"patent_number":"US-10490663","title":"N-type fin field-effect transistor","assignee":null,"inventors":[],"filing_date":"2018-02-13T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"The present disclosure provides N-type fin field-effect transistors. An N-type fin field-effect transistor includes a semiconductor substrate; at least one fin having a first side surface and a second side surface formed over the semiconductor substrate; a gate structure crossing over the fin and formed over the semiconductor substrate; and a source region and a drain region respectively formed on top of the fin at two sides of the gate structure by an ion implantation process on one of the first side surface and the second side surface of the fin at two sides of the gate structure and a thermal annealing process to diffuse doping ions into the other of the first side surface and the second side surface of the fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"N-type fin field-effect transistor","description":"The present disclosure provides N-type fin field-effect transistors. An N-type fin field-effect transistor includes a semiconductor substrate; at least one fin having a first side surface and a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490663","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490663","citation_suggestion":"Patentable. \"N-type fin field-effect transistor\" (US-10490663). https://patentable.app/patents/US-10490663","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490663","json":"https://patentable.app/api/llm-context/US-10490663","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:04:41.420Z"}