{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490673","patent":{"patent_number":"US-10490673","title":"Integration of graphene and boron nitride hetero-structure device","assignee":null,"inventors":[],"filing_date":"2018-03-02T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A microelectronic device includes a gated graphene component. The gated graphene component has a graphitic layer containing one or more layers of graphene. The graphitic layer has a channel region, a first contact region adjacent to the channel region and a second contact region adjacent to the channel region. A patterned hexagonal boron nitride (hBN) layer is disposed on the graphitic layer above the channel region. A gate is located over the patterned hBN layer above the channel region. A first connection is disposed on the graphitic layer in the first contact region, and a second connection is disposed on the graphitic layer in the second contact region. The patterned hBN layer does not extend completely under the first connection or under the second connection. A method of forming the gated graphene component in the microelectronic device is disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integration of graphene and boron nitride hetero-structure device","description":"A microelectronic device includes a gated graphene component. The gated graphene component has a graphitic layer containing one or more layers of graphene. The graphitic layer has a channel region, a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490673","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490673","citation_suggestion":"Patentable. \"Integration of graphene and boron nitride hetero-structure device\" (US-10490673). https://patentable.app/patents/US-10490673","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490673","json":"https://patentable.app/api/llm-context/US-10490673","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:01:49.176Z"}