{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490737","patent":{"patent_number":"US-10490737","title":"Magnetic memory element including magnesium perpendicular enhancement layer","assignee":null,"inventors":[],"filing_date":"2019-02-27T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","B82Y"],"num_claims":26,"abstract":"The present invention is directed to a magnetic memory element including a magnetic free layer structure that includes two magnetic free layers separated by a magnesium perpendicular enhancement layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a non-magnetic perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer. The two magnetic free layers have a same variable magnetization direction substantially perpendicular to layer planes thereof. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic memory element including magnesium perpendicular enhancement layer","description":"The present invention is directed to a magnetic memory element including a magnetic free layer structure that includes two magnetic free layers separated by a magnesium perpendicular enhancement layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490737","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490737","citation_suggestion":"Patentable. \"Magnetic memory element including magnesium perpendicular enhancement layer\" (US-10490737). https://patentable.app/patents/US-10490737","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490737","json":"https://patentable.app/api/llm-context/US-10490737","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:21:01.803Z"}