{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497433","patent":{"patent_number":"US-10497433","title":"Nonvolatile memory device including ferroelectric memory element and resistive memory element, and method of operating nonvolatile memory device","assignee":null,"inventors":[],"filing_date":"2018-06-23T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":12,"abstract":"A nonvolatile memory device according to one embodiment includes a ferroelectric memory element and a resistive memory element. The ferroelectric memory element includes a field effect transistor having a ferroelectric gate dielectric layer. The resistive memory element includes a resistance change memory layer disposed between a first memory electrode and a second memory electrode. A drain electrode of the field effect transistor is connected to the first memory electrode or second memory electrodes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device including ferroelectric memory element and resistive memory element, and method of operating nonvolatile memory device","description":"A nonvolatile memory device according to one embodiment includes a ferroelectric memory element and a resistive memory element. The ferroelectric memory element includes a field effect transistor havi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497433","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497433","citation_suggestion":"Patentable. \"Nonvolatile memory device including ferroelectric memory element and resistive memory element, and method of operating nonvolatile memory device\" (US-10497433). https://patentable.app/patents/US-10497433","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497433","json":"https://patentable.app/api/llm-context/US-10497433","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:17:03.595Z"}