{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497562","patent":{"patent_number":"US-10497562","title":"Method for manufacturing gallium nitride substrate using the hydride vapor phase epitaxy","assignee":null,"inventors":[],"filing_date":"2018-05-29T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"Disclosed a method of fabricating a gallium nitride substrate using hydride vapor phase epitaxy (HVPE), including a step of injecting ammonia (NH3) gas to perform first surface treatment on a sapphire substrate; a step of injecting ammonia gas and hydrogen chloride (HCl) gas to form a buffer layer on the sapphire substrate; a step of injecting ammonia gas to perform second surface treatment on the sapphire substrate; and a step of allowing gallium nitride (GaN) to grow on the sapphire substrate while lowering the flow rate ratio of ammonia gas to hydrogen chloride gas stepwise."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing gallium nitride substrate using the hydride vapor phase epitaxy","description":"Disclosed a method of fabricating a gallium nitride substrate using hydride vapor phase epitaxy (HVPE), including a step of injecting ammonia (NH3) gas to perform first surface treatment on a sapphire","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497562","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497562","citation_suggestion":"Patentable. \"Method for manufacturing gallium nitride substrate using the hydride vapor phase epitaxy\" (US-10497562). https://patentable.app/patents/US-10497562","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497562","json":"https://patentable.app/api/llm-context/US-10497562","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:10:52.482Z"}