{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497565","patent":{"patent_number":"US-10497565","title":"Method for forming semiconductor device structure","assignee":null,"inventors":[],"filing_date":"2018-10-02T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer has a trench. The method includes forming first spacers over inner walls of the trench. The method includes removing a portion of the first spacers. The method includes forming a filling layer into the trench to cover the first spacers. The filling layer and the first spacers together form a strip structure. The method includes removing the first layer. The method includes forming second spacers over two opposite first sidewalls of the strip structure. The method includes forming third spacers over second sidewalls of the second spacers. The method includes removing the filling layer and the second spacers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device structure","description":"A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer has a trench. The method includes forming first spacers o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497565","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497565","citation_suggestion":"Patentable. \"Method for forming semiconductor device structure\" (US-10497565). https://patentable.app/patents/US-10497565","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497565","json":"https://patentable.app/api/llm-context/US-10497565","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:14:17.751Z"}