{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497566","patent":{"patent_number":"US-10497566","title":"Layout design for fanout patterns in self-aligned double patterning process","assignee":null,"inventors":[],"filing_date":"2018-06-19T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","G11C","G11C","G11C"],"num_claims":21,"abstract":"A circuit structure comprises a plurality of first conducting lines extending in a first direction, the first conducting lines having a first pitch in a second direction orthogonal to the first direction; a plurality of linking lines extending in the second direction, the linking lines having a second pitch in the first direction, the second pitch being greater than the first pitch; and a plurality of connection structures connecting respective first conducting lines for current flow to respective linking lines, the connection structures each including a plurality of segments extending in the first direction, segments in the plurality of segments having a transition pitch in the second direction relative to adjacent segments in the plurality of segments greater than or equal to the first pitch, and less than the second pitch."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Layout design for fanout patterns in self-aligned double patterning process","description":"A circuit structure comprises a plurality of first conducting lines extending in a first direction, the first conducting lines having a first pitch in a second direction orthogonal to the first direct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497566","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497566","citation_suggestion":"Patentable. \"Layout design for fanout patterns in self-aligned double patterning process\" (US-10497566). https://patentable.app/patents/US-10497566","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497566","json":"https://patentable.app/api/llm-context/US-10497566","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:37:09.704Z"}