{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497567","patent":{"patent_number":"US-10497567","title":"Method of enhanced selectivity of hard mask using plasma treatments","assignee":null,"inventors":[],"filing_date":"2018-07-16T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Implementations described herein generally relate to an etching process for etching materials with high selectivity. In one implementation, a method of etching a gate material to form features in the gate material is provided. The method includes (a) exposing a cobalt mask layer to a fluorine-containing gas mixture in a first mode to form a passivation film on the cobalt mask layer. The cobalt mask layer exposes a portion of a gate material disposed on a substrate. The method further comprises (b) exposing the portion of the gate material to an etching gas mixture in a second mode to etch the portion of the gate material. The portion of the gate material is etched through openings defined in the cobalt mask layer and the portion of the gate material is etched at a greater rate than the cobalt mask layer having the passivation layer disposed thereon."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of enhanced selectivity of hard mask using plasma treatments","description":"Implementations described herein generally relate to an etching process for etching materials with high selectivity. In one implementation, a method of etching a gate material to form features in the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497567","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497567","citation_suggestion":"Patentable. \"Method of enhanced selectivity of hard mask using plasma treatments\" (US-10497567). https://patentable.app/patents/US-10497567","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497567","json":"https://patentable.app/api/llm-context/US-10497567","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:34:23.867Z"}