{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497570","patent":{"patent_number":"US-10497570","title":"Method for manufacturing semiconductor device having buffer layer","assignee":null,"inventors":[],"filing_date":"2015-06-16T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for manufacturing a semiconductor device includes the steps of forming a layer of a second conductivity type on a top-surface side of a substrate of a first conductivity type, and forming a buffer layer by performing a plurality of ion implantation steps, each of the ion implantation steps implanting ions of an impurity of the first conductivity type into a bottom-surface side of the substrate with an ion implantation angle with respect to a bottom surface of the substrate fixed, the ion implantation angle of a subsequent one of the ion implantation steps being smaller than that of the previous ion implantation step, wherein in the buffer layer formation step, the plurality of ion implantation steps is performed at a fixed acceleration energy."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device having buffer layer","description":"A method for manufacturing a semiconductor device includes the steps of forming a layer of a second conductivity type on a top-surface side of a substrate of a first conductivity type, and forming a b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497570","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device having buffer layer\" (US-10497570). https://patentable.app/patents/US-10497570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497570","json":"https://patentable.app/api/llm-context/US-10497570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:45:00.947Z"}