{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497610","patent":{"patent_number":"US-10497610","title":"Dual photoresist approach to lithographic patterning for pitch reduction","assignee":null,"inventors":[],"filing_date":"2016-12-06T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"Methods of lithographic patterning a dielectric layer. A first resist layer is formed on a hardmask layer, and a second resist layer is formed on the first resist layer. The second resist layer is patterned to form a first opening, which is transferred from the second resist layer to the first resist layer. The second resist layer is removed from the first resist layer after the first opening is transferred from the second resist layer to the first resist layer. The first resist layer is patterned to form a second opening laterally displaced in the first resist layer from the first opening. The first resist layer is comprised of a metal oxide photoresist that is removable selective to the hardmask layer. The hardmask layer and the dielectric layer may be subsequently patterned using first resist layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual photoresist approach to lithographic patterning for pitch reduction","description":"Methods of lithographic patterning a dielectric layer. A first resist layer is formed on a hardmask layer, and a second resist layer is formed on the first resist layer. The second resist layer is pat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497610","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497610","citation_suggestion":"Patentable. \"Dual photoresist approach to lithographic patterning for pitch reduction\" (US-10497610). https://patentable.app/patents/US-10497610","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497610","json":"https://patentable.app/api/llm-context/US-10497610","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:22:21.142Z"}