{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497614","patent":{"patent_number":"US-10497614","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2018-06-12T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate; forming a dielectric layer having an opening on the base substrate; forming a Ruthenium (Ru)-containing layer on side surfaces and a bottom of the opening and on a top surface of the dielectric layer; forming a Copper (Cu) containing layer to fill the opening and cover the Ruthenium (Ru)-containing layer; performing a first chemical mechanical polishing (CMP) step to remove a first partial thickness of the Copper (Cu)-containing layer; performing a second CMP step using a polishing slurry containing a Cu-corrosion-inhibitor to remove a second partial thickness of the Copper (Cu)-containing layer above the Ruthenium (Ru)-containing layer; and performing a third CMP step using a polishing slurry containing a Cu-corrosion-inhibitor to remove a third partial thickness of the Copper (Cu)-containing layer above the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabrication method thereof","description":"Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate; forming a dielectric layer having an opening on the base substrate; ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497614","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497614","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-10497614). https://patentable.app/patents/US-10497614","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497614","json":"https://patentable.app/api/llm-context/US-10497614","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:06:28.681Z"}