{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497626","patent":{"patent_number":"US-10497626","title":"Structure and method for metal gates with roughened barrier layer","assignee":null,"inventors":[],"filing_date":"2018-08-13T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor device includes forming a gate dielectric layer on a substrate; forming a barrier layer over the gate dielectric layer; treating the barrier layer to roughen an outer surface of the barrier layer, resulting in a treated barrier layer; and forming a metal layer over the treated barrier layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method for metal gates with roughened barrier layer","description":"A method of forming a semiconductor device includes forming a gate dielectric layer on a substrate; forming a barrier layer over the gate dielectric layer; treating the barrier layer to roughen an out","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497626","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497626","citation_suggestion":"Patentable. \"Structure and method for metal gates with roughened barrier layer\" (US-10497626). https://patentable.app/patents/US-10497626","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497626","json":"https://patentable.app/api/llm-context/US-10497626","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:01:26.004Z"}