{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497636","patent":{"patent_number":"US-10497636","title":"Passivation for silicon carbide (SiC) device and method for fabricating same","assignee":null,"inventors":[],"filing_date":"2016-11-21T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A passivation method for a silicon carbide (SiC) surface may include steps of providing a silicon carbide surface, depositing a thin metal layer on the silicon carbide surface, forming a first passivation layer on the metal layer at low temperature, and generating a dielectric layer by a reaction between a gas/liquid ambient and the thin metal layer. In one embodiment, the thin metal layer is deposited on the silicon carbide surface by sputtering, e-beam evaporation, electroplating, etc. In another embodiment, the metal may include, but not limited to, aluminum, magnesium, etc. In a further embodiment, the passivation layer can be a low temperature oxide and/or nitride layer. In still a further embodiment, the dielectric layer can be aluminum oxide, titanium di-oxide etc. The passivation method for a silicon carbide (SiC) may further include a step of forming a second passivation layer on the first passivation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Passivation for silicon carbide (SiC) device and method for fabricating same","description":"A passivation method for a silicon carbide (SiC) surface may include steps of providing a silicon carbide surface, depositing a thin metal layer on the silicon carbide surface, forming a first passiva","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497636","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497636","citation_suggestion":"Patentable. \"Passivation for silicon carbide (SiC) device and method for fabricating same\" (US-10497636). https://patentable.app/patents/US-10497636","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497636","json":"https://patentable.app/api/llm-context/US-10497636","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:22:25.692Z"}