{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497703","patent":{"patent_number":"US-10497703","title":"Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins","assignee":null,"inventors":[],"filing_date":"2018-02-12T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"At least one method, apparatus and system disclosed involves forming a finFET device having silicon and silicon germanium fins. The method includes: forming an n-doped and a p-doped region in a semiconductor wafer; forming a layer of silicon above both the those regions; removing a portion of the silicon layer above the p-doped region to create a first recess; forming a layer of silicon germanium in the first recess; etching away at least a portion of the silicon layer and the underlying p-doped region; etching away at least a portion of the silicon germanium layer and the underlying n-doped region; forming fins from the unetched silicon and silicon germanium layers; and forming a shallow trench isolation dielectric in the etched away portion of the silicon layer and the underlying p-doped region and in the etched away portion of the silicon germanium layer and the underlying n-doped region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins","description":"At least one method, apparatus and system disclosed involves forming a finFET device having silicon and silicon germanium fins. The method includes: forming an n-doped and a p-doped region in a semico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497703","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497703","citation_suggestion":"Patentable. \"Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins\" (US-10497703). https://patentable.app/patents/US-10497703","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497703","json":"https://patentable.app/api/llm-context/US-10497703","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:19:31.022Z"}