{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497718","patent":{"patent_number":"US-10497718","title":"Silicon-on-insulator structure having bipolar stress, and manufacturing method therefor","assignee":null,"inventors":[],"filing_date":"2018-05-17T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"Provided are a silicon-on-insulator structure having bipolar stress and a manufacturing method therefor. The manufacturing method comprises providing a composite substrate, wherein the composite substrate has a silicon substrate layer, a buried oxide layer and a silicon-on-insulator layer sequentially from bottom to top, epitaxially growing a silicon germanium layer on an upper surface of the silicon-on-insulator layer; depositing a hard mask layer to cover a portion of the silicon germanium layer corresponding to an N-type MOS transistor region; depositing a surface oxide layer to cover the silicon germanium layer and the hard mask layer; performing a high temperature annealing treatment so that a portion of the silicon-on-insulator layer corresponding to a P-type MOS transistor region is converted into a silicon-germanium-on-insulator layer, and the portion corresponding to the N-type MOS transistor region is converted into a tensile stress silicon-on-insulator layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon-on-insulator structure having bipolar stress, and manufacturing method therefor","description":"Provided are a silicon-on-insulator structure having bipolar stress and a manufacturing method therefor. The manufacturing method comprises providing a composite substrate, wherein the composite subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497718","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497718","citation_suggestion":"Patentable. \"Silicon-on-insulator structure having bipolar stress, and manufacturing method therefor\" (US-10497718). https://patentable.app/patents/US-10497718","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497718","json":"https://patentable.app/api/llm-context/US-10497718","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T22:31:06.620Z"}