{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497719","patent":{"patent_number":"US-10497719","title":"Method for selectively increasing silicon fin area for vertical field effect transistors","assignee":null,"inventors":[],"filing_date":"2018-01-25T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for providing a semiconductor device is described. The method provides a plurality of fins. A first portion of each of the plurality of fins is covered by a mask. A second portion of each of the plurality of fins is exposed by the mask. The method also performs an anneal in a volume-increasing ambient, such as hydrogen, at anneal temperature(s) above one hundred degrees Celsius and not more than six hundred degrees Celsius. The second portion of each of the fins is exposed during the anneal such that the second portion of each of the fins undergoes a volume expansion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for selectively increasing silicon fin area for vertical field effect transistors","description":"A method for providing a semiconductor device is described. The method provides a plurality of fins. A first portion of each of the plurality of fins is covered by a mask. A second portion of each of ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497719","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497719","citation_suggestion":"Patentable. \"Method for selectively increasing silicon fin area for vertical field effect transistors\" (US-10497719). https://patentable.app/patents/US-10497719","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497719","json":"https://patentable.app/api/llm-context/US-10497719","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:44:18.386Z"}