{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497726","patent":{"patent_number":"US-10497726","title":"Semiconductor device having silicon devices in a silicon layer and oxide semiconductor devices in an oxide semiconductor layer of a same chip and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2017-06-15T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H02M"],"num_claims":16,"abstract":"A semiconductor device having reduced size, and a manufacturing method of the semiconductor device, where the semiconductor device has a silicon layer provided in a first region on a sapphire substrate, and a silicon device formed on the silicon layer. An oxide semiconductor layer is provided in a second region on the sapphire substrate, and an oxide semiconductor device is formed in the oxide semiconductor layer. The silicon device is connected to the oxide semiconductor device by plural wiring lines formed in a wiring line layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having silicon devices in a silicon layer and oxide semiconductor devices in an oxide semiconductor layer of a same chip and semiconductor device manufacturing method","description":"A semiconductor device having reduced size, and a manufacturing method of the semiconductor device, where the semiconductor device has a silicon layer provided in a first region on a sapphire substrat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497726","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497726","citation_suggestion":"Patentable. \"Semiconductor device having silicon devices in a silicon layer and oxide semiconductor devices in an oxide semiconductor layer of a same chip and semiconductor device manufacturing method\" (US-10497726). https://patentable.app/patents/US-10497726","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497726","json":"https://patentable.app/api/llm-context/US-10497726","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:15.365Z"}