{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497746","patent":{"patent_number":"US-10497746","title":"Three-dimensional integration for qubits on crystalline dielectric","assignee":null,"inventors":[],"filing_date":"2018-05-25T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["B82Y","G06N","H01L"],"num_claims":25,"abstract":"Techniques related to a three-dimensional integration for qubits on crystalline dielectric and method of fabricating the same are provided. A superconductor structure can comprise a first wafer comprising a first crystalline silicon layer attached to a first patterned superconducting layer, and a second wafer comprising a second crystalline silicon layer attached to a second patterned superconducting layer. The second patterned superconducting layer of the second wafer can be attached to the first patterned superconducting layer of the first wafer. A buried layer can comprise the first patterned superconducting layer and the second patterned superconducting layer. The buried layer can comprise one or more circuits. The superconductor structure can also comprise a transmon qubit that can comprise a Josephson junction and one or more capacitor pads comprising superconducting material. The Josephson junction can comprise a first superconductor contact, a tunnel barrier layer, and a second superconductor contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional integration for qubits on crystalline dielectric","description":"Techniques related to a three-dimensional integration for qubits on crystalline dielectric and method of fabricating the same are provided. A superconductor structure can comprise a first wafer compri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497746","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497746","citation_suggestion":"Patentable. \"Three-dimensional integration for qubits on crystalline dielectric\" (US-10497746). https://patentable.app/patents/US-10497746","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497746","json":"https://patentable.app/api/llm-context/US-10497746","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:24:47.138Z"}