{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497781","patent":{"patent_number":"US-10497781","title":"Methods for doping a sub-fin region of a semiconductor structure by backside reveal and associated devices","assignee":null,"inventors":[],"filing_date":"2015-12-23T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"Methods for doping a sub-fin region of a semiconductor structure include providing a semiconductor structure that comprises a substrate and a plurality of fins formed on the substrate, the plurality of fins having sub-fin regions adjacent to the substrate; removing the substrate to expose a portion of the sub-fin regions of the plurality of fins, and implanting a dopant material into the exposed portion of the sub-fin region. The method may also include performing an annealing process after the implantation such that the dopant becomes electrically active. The method may also include patterning the backside of the semiconductor structure. Devices constructed using the disclosed methods are also provided, and other embodiments are discussed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for doping a sub-fin region of a semiconductor structure by backside reveal and associated devices","description":"Methods for doping a sub-fin region of a semiconductor structure include providing a semiconductor structure that comprises a substrate and a plurality of fins formed on the substrate, the plurality o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497781","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497781","citation_suggestion":"Patentable. \"Methods for doping a sub-fin region of a semiconductor structure by backside reveal and associated devices\" (US-10497781). https://patentable.app/patents/US-10497781","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497781","json":"https://patentable.app/api/llm-context/US-10497781","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:36:27.370Z"}