{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497782","patent":{"patent_number":"US-10497782","title":"Trench power semiconductor component and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-05-09T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at least one cell trench that is formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate electrode disposed above the shielding electrode, an insulating layer, an intermediate dielectric layer, and an inner dielectric layer. The insulating layer covers the inner wall surface of the cell trench. The intermediate dielectric layer interposed between the shielding electrode and the insulating layer has a bottom opening. The inner dielectric layer interposed between the shielding electrode and the intermediate dielectric layer is made of a material different from that of the intermediate dielectric layer, and fills the bottom opening so that the space of the cell trench beneath the shielding electrode is filled with the same material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench power semiconductor component and method of manufacturing the same","description":"The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at le","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497782","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497782","citation_suggestion":"Patentable. \"Trench power semiconductor component and method of manufacturing the same\" (US-10497782). https://patentable.app/patents/US-10497782","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497782","json":"https://patentable.app/api/llm-context/US-10497782","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:45:00.854Z"}