{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497787","patent":{"patent_number":"US-10497787","title":"Drift region implant self-aligned to field relief oxide with sidewall dielectric","assignee":null,"inventors":[],"filing_date":"2017-01-16T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit which includes a field-plated FET is formed by forming a first opening in a layer of oxide mask, exposing an area for a drift region. Dopants are implanted into the substrate under the first opening. Subsequently, dielectric sidewalls are formed along a lateral boundary of the first opening. A field relief oxide is formed by thermal oxidation in the area of the first opening exposed by the dielectric sidewalls. The implanted dopants are diffused into the substrate to form the drift region, extending laterally past the layer of field relief oxide. The dielectric sidewalls and layer of oxide mask are removed after the layer of field relief oxide is formed. A gate is formed over a body of the field-plated FET and over the adjacent drift region. A field plate is formed immediately over the field relief oxide adjacent to the gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Drift region implant self-aligned to field relief oxide with sidewall dielectric","description":"An integrated circuit which includes a field-plated FET is formed by forming a first opening in a layer of oxide mask, exposing an area for a drift region. Dopants are implanted into the substrate und","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497787","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497787","citation_suggestion":"Patentable. \"Drift region implant self-aligned to field relief oxide with sidewall dielectric\" (US-10497787). https://patentable.app/patents/US-10497787","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497787","json":"https://patentable.app/api/llm-context/US-10497787","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:46:26.868Z"}