{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497795","patent":{"patent_number":"US-10497795","title":"Triple well isolated diode and method of making","assignee":null,"inventors":[],"filing_date":"2016-07-01T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H02M"],"num_claims":20,"abstract":"A triple well isolated diode including a substrate having a first conductivity type and a buried layer in the substrate. The buried layer has a second conductivity type opposite to the first conductivity type. The triple well isolated diode includes an epi-layer over the substrate and the buried layer. A portion of the epi-layer having the first conductivity type contacts the buried layer. The triple well isolated diode includes a first well, a second well, a third well and a deep well in the epi-layer. The first well and the third well have the second conductivity type. The second well and the deep well have the first conductivity type. The second well surrounds sides of the first well. The third well surrounds sides of the second well. The deep well extends beneath the first well to electrically connect to the second well on opposite sides of the first well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Triple well isolated diode and method of making","description":"A triple well isolated diode including a substrate having a first conductivity type and a buried layer in the substrate. The buried layer has a second conductivity type opposite to the first conductiv","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497795","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497795","citation_suggestion":"Patentable. \"Triple well isolated diode and method of making\" (US-10497795). https://patentable.app/patents/US-10497795","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497795","json":"https://patentable.app/api/llm-context/US-10497795","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:19:54.671Z"}