{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497799","patent":{"patent_number":"US-10497799","title":"Dummy dielectric fins for finFETs with silicon and silicon germanium channels","assignee":null,"inventors":[],"filing_date":"2016-11-16T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for forming a semiconductor device includes forming first fins from a first semiconductor material and second fins from a second semiconductor material and encapsulating the first fins and the second fins with a protective dielectric. Semiconductor material between the first fins and the second fins is etched to form trenches. A dielectric fill is employed to fill up the trenches, between the first fins and between the second fins. The first semiconductor material below the first fins and the second semiconductor material below the second fins are oxidized with the first and second fins being protected by the protective dielectric. Fins in an intermediary region between the first fins and the second fins are oxidized to form dummy fins in the intermediary region to maintain a substantially same topology across the device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dummy dielectric fins for finFETs with silicon and silicon germanium channels","description":"A method for forming a semiconductor device includes forming first fins from a first semiconductor material and second fins from a second semiconductor material and encapsulating the first fins and th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497799","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497799","citation_suggestion":"Patentable. \"Dummy dielectric fins for finFETs with silicon and silicon germanium channels\" (US-10497799). https://patentable.app/patents/US-10497799","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497799","json":"https://patentable.app/api/llm-context/US-10497799","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:47:40.158Z"}