{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497803","patent":{"patent_number":"US-10497803","title":"Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications","assignee":null,"inventors":[],"filing_date":"2017-08-08T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"The present disclosure relates to semiconductor structures and, more particularly, to fully depleted silicon on insulator (SOI) semiconductor structures and methods of manufacture. The structure includes: a gate structure formed over a semiconductor material; a source region adjacent to the gate structure; a drain region remote from the gate structure; and a drift region separating the gate structure from the drain region. The drift region includes an epitaxial material grown on the semiconductor material which increases the thickness of the semiconductor material in the drift region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications","description":"The present disclosure relates to semiconductor structures and, more particularly, to fully depleted silicon on insulator (SOI) semiconductor structures and methods of manufacture. The structure inclu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497803","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497803","citation_suggestion":"Patentable. \"Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications\" (US-10497803). https://patentable.app/patents/US-10497803","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497803","json":"https://patentable.app/api/llm-context/US-10497803","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:37:00.000Z"}