{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497805","patent":{"patent_number":"US-10497805","title":"Semiconductor structure and manufacturing method of the same","assignee":null,"inventors":[],"filing_date":"2018-08-14T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor structure and a manufacturing method of a semiconductor structure are provided. The semiconductor structure includes a semiconductor substrate, a gate, a first diffusion region and a second diffusion region. The gate is disposed on the semiconductor substrate and extends along a first direction. The first diffusion region is formed in the semiconductor substrate, and the second diffusion region is formed in the first diffusion region. The first diffusion region has a first portion located underneath the gate and a second portion protruded from a lateral side of the gate, the first portion has a first length parallel to the first direction, the second portion has a second length parallel to the first direction, and the first length is larger than the second length."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method of the same","description":"A semiconductor structure and a manufacturing method of a semiconductor structure are provided. The semiconductor structure includes a semiconductor substrate, a gate, a first diffusion region and a s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497805","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497805","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method of the same\" (US-10497805). https://patentable.app/patents/US-10497805","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497805","json":"https://patentable.app/api/llm-context/US-10497805","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:10:31.171Z"}