{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497857","patent":{"patent_number":"US-10497857","title":"Semiconductor devices","assignee":null,"inventors":[],"filing_date":"2017-07-21T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":17,"abstract":"A semiconductor device may include a bottom electrode contact and a magnetic tunnel junction on the bottom electrode contact. The semiconductor device may include a capping insulating layer covering side surfaces of the magnetic tunnel junction. A thickness of the capping insulating layer may be larger than a vertical height of the magnetic tunnel junction. The bottom electrode contact may be in a mold insulating layer on a substrate. The semiconductor device may include a top electrode on the magnetic tunnel junction. The bottom electrode contact may include a monometallic material. The top electrode may include a conductive metal nitride. The semiconductor device may be configured to improve the measurement sensitivity of a semiconductor inspection system with regard to perpendicular magnetization characteristics of magnetic layers included in the magnetic tunnel junction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices","description":"A semiconductor device may include a bottom electrode contact and a magnetic tunnel junction on the bottom electrode contact. The semiconductor device may include a capping insulating layer covering s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497857","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497857","citation_suggestion":"Patentable. \"Semiconductor devices\" (US-10497857). https://patentable.app/patents/US-10497857","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497857","json":"https://patentable.app/api/llm-context/US-10497857","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:36:48.447Z"}