{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10497860","patent":{"patent_number":"US-10497860","title":"Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method","assignee":null,"inventors":[],"filing_date":"2016-01-08T00:00:00.000Z","publication_date":"2019-12-03T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of magnetic random access memory (MRAM) cells with a minimum dimension below the lower resolution limit of some optical lithography techniques. A copolymer solution comprising first and second polymer species is spin-coated over a heterostructure which resides over a surface of a substrate. The heterostructure comprises first and second ferromagnetic layers which are separated by an insulating layer. The copolymer solution is subjected to self-assembly into a phase-separated material comprising a pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first polymer species is then removed, leaving a pattern of micro-domains of the second polymer species. A pattern of magnetic memory cells within the heterostructure is formed by etching through the heterostructure while utilizing the pattern of micro-domains as a hardmask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method","description":"Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of magnetic random access memory (MRAM) cells with a minimum dimension below the lower resol","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10497860","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10497860","citation_suggestion":"Patentable. \"Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method\" (US-10497860). https://patentable.app/patents/US-10497860","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10497860","json":"https://patentable.app/api/llm-context/US-10497860","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:59:52.879Z"}