{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504722","patent":{"patent_number":"US-10504722","title":"Growth of III-nitride semiconductors on thin van der Waals buffers for mechanical lift off and transfer","assignee":null,"inventors":[],"filing_date":"2018-07-24T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A semiconductor device includes a mechanical release layer, such as a van der Waals buffer layer, with a predetermined material roughness and thickness adjacent to a first substrate; a nucleation layer adjacent to the mechanical release layer; and a first semiconductor layer attached to the nucleation layer. The first semiconductor layer, the nucleation layer, and a portion of the mechanical release layer are releasably connected to the first substrate. The predetermined material roughness and thickness of the mechanical release layer determines a bonding strength of the first semiconductor layer to the first substrate. The semiconductor device may include an aluminum nitride insert layer adjacent to the first semiconductor layer; an aluminum gallium nitride barrier layer adjacent to the aluminum nitride insert layer; and a second semiconductor layer adjacent to the aluminum gallium nitride barrier layer. The semiconductor device may include a second substrate attached to the released first semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Growth of III-nitride semiconductors on thin van der Waals buffers for mechanical lift off and transfer","description":"A semiconductor device includes a mechanical release layer, such as a van der Waals buffer layer, with a predetermined material roughness and thickness adjacent to a first substrate; a nucleation laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504722","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504722","citation_suggestion":"Patentable. \"Growth of III-nitride semiconductors on thin van der Waals buffers for mechanical lift off and transfer\" (US-10504722). https://patentable.app/patents/US-10504722","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504722","json":"https://patentable.app/api/llm-context/US-10504722","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:34:31.326Z"}