{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504732","patent":{"patent_number":"US-10504732","title":"Impurity diffusion agent composition and method for manufacturing semiconductor substrate","assignee":null,"inventors":[],"filing_date":"2017-12-18T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate even by heating at a low temperature, and a method for manufacturing a semiconductor substrate using the diffusion agent composition. In a diffusion agent composition including an impurity diffusion component, the impurity diffusion component, which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and which is a boron compound including a nitrogen atom, is used."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Impurity diffusion agent composition and method for manufacturing semiconductor substrate","description":"A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate ev","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504732","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504732","citation_suggestion":"Patentable. \"Impurity diffusion agent composition and method for manufacturing semiconductor substrate\" (US-10504732). https://patentable.app/patents/US-10504732","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504732","json":"https://patentable.app/api/llm-context/US-10504732","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:34:10.033Z"}