{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504768","patent":{"patent_number":"US-10504768","title":"Contact structures to deep trench isolation structures and method of nanufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-06-28T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to semiconductor structures and, more particularly, to contact structures to deep trench isolation structures and methods of manufacture. The structure includes: a deep trench structure lined with insulator material on sidewalls thereof; conductive material filling the deep trench structure; a local oxide extending above the trench on exposed portions of the insulator material; an interlevel dielectric material on the local oxide and the conductive material filling the deep trench structure; and a contact in the interlevel dielectric material, extending to the conductive material and on a side of the local oxide."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact structures to deep trench isolation structures and method of nanufacturing the same","description":"The present disclosure relates to semiconductor structures and, more particularly, to contact structures to deep trench isolation structures and methods of manufacture. The structure includes: a deep ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504768","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504768","citation_suggestion":"Patentable. \"Contact structures to deep trench isolation structures and method of nanufacturing the same\" (US-10504768). https://patentable.app/patents/US-10504768","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504768","json":"https://patentable.app/api/llm-context/US-10504768","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:21:40.536Z"}