{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504775","patent":{"patent_number":"US-10504775","title":"Methods of forming metal layer structures in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2018-05-31T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes providing a substrate comprising a material layer and a hard mask layer; patterning the hard mask layer to form hard mask lines; forming a spacer layer over the substrate, including over the hard mask lines, resulting in trenches defined by the spacer layer, wherein the trenches track the hard mask lines; forming a antireflective layer over the spacer layer, including over the trenches; forming an L-shaped opening in the antireflective layer, thereby exposing at least two of the trenches; filling the L-shaped opening with a fill material; etching the spacer layer to expose the hard mask lines; removing the hard mask lines; after removing the hard mask lines, transferring a pattern of the spacer layer and the fill material onto the material layer, resulting in second trenches tracking the pattern; and filling the second trenches with a conductive material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming metal layer structures in semiconductor devices","description":"A method includes providing a substrate comprising a material layer and a hard mask layer; patterning the hard mask layer to form hard mask lines; forming a spacer layer over the substrate, including ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504775","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504775","citation_suggestion":"Patentable. \"Methods of forming metal layer structures in semiconductor devices\" (US-10504775). https://patentable.app/patents/US-10504775","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504775","json":"https://patentable.app/api/llm-context/US-10504775","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:51:04.152Z"}